Mitsubishi Electric US, Inc. and NanoSemi, Inc. to Demonstrate Ultra Wide-band Linearized Doherty Amplifier for Next Generation LTE Base Stations at IMS2017 in Honolulu on June 6-8, 2017

26 May

Mitsubishi Electric US, Inc. and NanoSemi, Inc. to Demonstrate Ultra Wide-band Linearized Doherty Amplifier for Next Generation LTE Base Stations at IMS2017 in Honolulu on June 6-8, 2017

Mitsubishi Electric Corporation (Information Technology R&D Center and High Frequency and Optical Device Works), along with Mitsubishi Electric Research Laboratories, presented a paper earlier this year at Radio Wireless Week describing this wide-band Doherty power amplifier design technique for next generation LTE base stations using GaN transistor technology.  The demonstration at IMS2017 will further illustrate the superb ability to linearize an ultra-wideband signal applied to Mitsubishi Electric’s GaN power amplifier using an advanced pre-distortion technique provided by NanoSemi, Inc.

For the full press release got to: Mitsubishi press release

Aloha nui loa,

NanoSemi